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4GB 1600MHz DDR3L Non-ECC CL11 SODIMM 1.35V
Internal memory 4 GBInternal memory type DDR3Memory clock speed 1600 MHzComponent for NotebookECC No Memory form factor 204-pin SO-DIMMMemory layout (modules x size) 1 x 4 GBCAS latency CL11Memory voltage 1.35; 1.5 VRegistered No Memory bus 64 bitLead plating GoldModule configuration 512M X 64Memory Row cycle time 48.125 nsRefresh row cycle time 260 nsRow active time 35 nsOperational conditions Operating temperature (T-T) 0 - 85