Samsung 850 PRO 256GB 2.5" SATA III SSD

What is V-NAND and How Does it Differ from Existing Technology?

Samsung's flash memory is fabricated using an innovative 3D V-NAND architecture, which stacks 32 cell layers on top of one another rather than trying to decrease the cells' length and width to fit today's shrinking form factors. The result is higher density and higher performance using a smaller footprint and a breakthrough in overcoming the density limits of conventional planar NAND architecture.

Boost Performance with an Industry-Leading 3D V-NAND SSD

Powered by Samsung's cutting-edge 3D V-NAND technology, the NAND flash memory delivers the ultimate in read and write performance in both sequential and random aspects. This is especially impressive in the 128GBmodel* that outperforms similar models on the market by more than 100MBps in write speed.

Shift into High Gear with Enhanced RAPID Mode

You can kick up the read/write performance on every capacity when you need it with RAPID mode. Just like shifting gears in a car, Magician software gives you the option to enhance performance by processing data on a system level using free PC memory (DRAM) as a cache, providing 1.8 times faster performance in the RAPID mode*.

An SSD that Won't Quit Before You Do

With twice the endurance of the previous model*, the 850 PRO will keep working as long as you do. Samsung's V-NAND technology is built to handle 150 Terabytes Written (TBW) which equates to a 40GB daily read/write workload over a 10-year period. Plus, it comes with the industry's top-level ten-year limited warranty.

Work Longer with High-Efficiency Innovation

The efficient, power management components in the 850 PRO enable you work longer and more productively. Boasting the lowest power consumption of any SSD when in full use, the 850 PRO expends less energy while maintaining market-leading performance. The 850 PRO fully supports the sleep mode on the Ultrabook™, consuming only 2 milli-Watts of power. Plus, its LPDDR2 cache memory provides higher performance while consuming 30 percent less power when active and 93 percent less power when idle than typical DDR2 or DDR3 memory.